RVP ACE
Vertical

RVP Ace

Performance Across 200–300mm

The RVP Ace is a high-productivity vertical batch furnace for 200 mm and 300 mm wafers. It provides a flexible platform for diffusion, oxidation, and LPCVD processes, combining strong process performance with optimized cost of ownership. Proven process modules, updated controls, and flexible wafer-handling options enable the system to meet a wide range of production and engineering requirements.

specifications

RVP Ace at a glance

Process capabilities

Processes supported on the RVP Ace

Diffusion

An atmospheric diffusion process is a heat treatment in a mostly inert environment which distributes dopants in a silicon, GaAs, InP or other semiconductor wafer to a desired depth, changing the electrical properties of the semiconductor. Sometimes a reactive element such as oxygen is added, consuming silicon and converting it into silicon dioxide (SiO2) for use in many applications.

LPCVD

Low Pressure Chemical Vapor Deposition uses a chemical reaction to convert gas phase precursors into useful films. The products of that reaction are deposited on top of the wafer and therefore do not consume atoms from the base material.

Other

Tempress offers furnace solutions for various other processes such as wafer splitting (SOI/POI) and polyimide curing, and is open to customise and co-develop specific thermal processes to fit your needs.

Next step

Discuss an RVP Ace configuration

Talk to a thermal processing specialist about process requirements, wafer formats and production volumes.